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| 2SK4023 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOS V) 2SK4023 Switching Regulator, DC/DC Converter Unit: mm MAX * * * * * 4 V gate drive Low drain-source ON-resistance: RDS (ON) = 4.0 (typ.) High forward transfer admittance: |Yfs| = 0.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 450 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) MAX Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 450 450 30 1 2 20 122 1 2 150 -55~150 Unit MAX V V V A W mJ A mJ C C 1 MAX Absolute Maximum Ratings (Ta = 25C) Pulse (t = 1 ms) (Note 1) JEDEC JEITA TOSHIBA 2-7J2B Drain power dissipation (Tc = 25C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 6.25 125 Unit C/W C/W Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: VDD = 90 V, Tch = 25C, L = 203 mH, IAR = 1 A, RG = 25 Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-11-06 2SK4023 Electrical Characteristics (Ta = 25C) Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge Gate-source charge Gate-drain charge tf VDD200 V toff Qg Qgs Qgd VDD360 V, VGS = 10 V, ID = 1 A Duty 1%, tw = 10 s 70 5 3 2 Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr ton 10 V VGS 0V 10 ID = 0.5 A VOUT VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V VDS = 450 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 0.5 A VDS = 10 V, ID = 0.5 A Min 450 2.0 0.3 Typ. 4.0 0.8 180 2 20 7 15 30 Max 10 100 2.0 4.6 pF Unit A A V V S ns RL = 400 nC Source-Drain Ratings and Characteristics (Ta = 25C) Characteristic Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 1 A, VGS = 0 V IDR = 1 A, VGS = 0 V, dIDR/dt = 100 A/s Min Typ. 350 1.3 Max 1 2 -1.7 Unit A A V ns C Marking K4023 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-06 2SK4023 ID - VDS 1.0 Common source TcTc 25C = = 25C Pulse test 2.0 10 8.0 5.75 6.0 5.5 1.6 10 8.0 ID - VDS 6.25 6.0 Common source Tc = Tc = 25C 25C Pulse test 0.8 Drain current ID (A) Drain current ID (A) 0.6 5.25 1.2 5.75 0.4 5.0 4.75 0.8 5.5 5.25 0.2 VGS = 4.5 V 0.4 5.0 VGS = 4.5 V 0 0 2 4 6 8 10 0 0 10 20 30 40 50 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 2.0 Common source VDS = = 20 V VDS 10 V Pulse test 20 VDS - VGS Common source Tc = 25C = 25C Tc Pulse test 1.6 VDS (V) Drain-source voltage 100 16 Drain current ID (A) 1.2 12 0.8 8 ID = 1 A 0.25 0 0.5 0.4 25 Ta = -55C 4 0 0 2 4 6 8 10 0 4 8 12 16 20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) Yfs - ID (S) 5 3 1 0.5 0.3 100 Common source VDS = 10 V VDS = 20 V Pulse test 50 Ta = -55C 30 25 Common source Tc ==25C Tc 25C VGS = 10 V Pulse test RDS (ON) - ID Forward transfer admittance Yfs Drain-source ON-resistance RDS (ON) () 10 0.1 0.05 0.03 5 3 VGS = 10, 15 V 0.01 0.01 0.03 0.1 0.3 1 3 10 1 0.1 0.3 0.5 1 3 5 10 Drain current ID (A) Drain current ID (A) 3 2006-11-06 2SK4023 RDS (ON) - Tc () 16 Common source VV = = 10 V GS 10 V GS Pulse test 10 Common source Tc = 25C Tc = 25C Pulse test 3 IDR - VDS Drain-source ON-resistance RDS (ON) Drain reverse current IDR 12 0.5 (A) 1 ID = 1A 8 0.25 0.3 0.1 10 3 4 0.03 1 VGS = 0, -1 V -0.6 -0.8 -1.0 -1.2 0 -80 -40 0 40 80 160 0.01 0 -0.2 -0.4 Case temperature Tc (C) Drain-source voltage VDS (V) Capacitance - VDS 500 300 Ciss 5 Vth - Tc Common source VDS = DS V 10 V V 10 = ID = 1D = 1 mA I mA Pulse test (pF) 4 Capacitance C 50 30 Coss 10 5 3 Common source VGS = 0V f =0V VGS= 1 MHz f = 1 MHz Tc = 25C Tc = 25C 0.3 0.5 1 3 5 10 Vth (V) Gate threshold voltage Crss 30 50 100 100 3 2 1 1 0.1 0 -80 -40 0 40 80 120 160 Drain-source voltage VDS (V) Case temperature Tc (C) PD - Tc 40 500 Dynamic input/output characteristics Common source ID = 1 A Tc = 25C Pulse test VDS 90 300 VDS = 360 V 200 8 12 180 20 Drain power dissipation PD (W) VDS (V) 30 400 16 Drain-source voltage 20 10 100 VGS 4 0 0 40 80 120 160 200 0 0 2 4 6 8 0 10 Case temperature Tc (C) Total gate charge Qg (nC) 4 2006-11-06 Gate-source voltage VGS (V) 2SK4023 rth - tw 10 Normalized transient thermal impedance rth (t)/Rth (ch-a) 5 3 1 0.5 0.3 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.05 PDM Single pulse t T Duty = t/T Rth (ch-c) = 6.25C/W 100 1m 10 m 100 m 1 10 0.03 0.01 0.01 10 Pulse width tw (S) Safe operating area 30 150 EAS - Tch 10 Avalanche energy EAS (mJ) 120 3 90 ID max () * ID max () 1 ms * 100 s * (A) 1 60 Drain current ID 0.3 Tc = 25C 30 0.1 * Single nonrepetitive pulse * Tc = 25C Tc = 25C 00.3 Curves must be derated linearly with increase in temperature. 00.1 0.1 VDSS max 1 10 100 0 25 50 75 100 125 150 Channel temperature (initial) Tch (C) Drain-source voltage VDS (V) 15 V -15 V BVDSS IAR VDD VDS Waveform Test circuit RG = 25 VDD = 90 V, L = 203 mH E AS = 1 B VDSS L I2 B 2 - VDD VDSS 5 2006-11-06 2SK4023 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-06 |
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